suface mount package. s mhop microelectronics c orp. a STF2455 symbol v ds v gs i dm 70 w a p d c 1.8 -55 to 150 i d units parameter 24 13 80 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 24v 13a 6.3 @ vgs=4.0v 6.2 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw nov,09,2012 1 details are subject to change without notice. a t a =25 c t a =70 c a t a =70 c w green product esd protected. 10.4 1.1 7.0 @ vgs=3.1v 8.5 @ vgs=2.5v 6.5 @ vgs=3.7v s g d (bottom view) p i n 1 g s s d d d t d f n 2 x 3 n-channel enhancement mode field effect transistor
symbol min typ max units bv dss 24 v 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =6.5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =1.0ma v ds =20v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics STF2455 ver 1.0 0.85 1.5 g fs 39 s c iss 2400 pf c oss 422 pf c rss 376 pf q g 50 nc 139 nc q gs 110 nc q gd 59 t d(on) 24 ns t r 4 ns t d(off) 12 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =16v i d =6.5a v gs =4.5v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =6.5a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance v gs =4.0v , i d =6.5a m ohm c f=1.0mhz c v ds =16v,i d =13a, v gs =4.5v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =13a 0.82 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 10us, duty cycle < 1%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw nov,09,2012 2 _ 4.7 6.2 4.8 6.3 v gs =3.7v , i d =6.5a m ohm v gs =2.5v , i d =6.5a m ohm 6.5 8.5 3.5 3.6 5.0 v gs =3.1v , i d =6.5a m ohm 5.4 7.0 4.1 4.9 6.5 3.8
STF2455 ver 1.0 www.samhop.com.tw nov,09,2012 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 0.1 100 v gs =4.5v single pulse t a =25 c r ds (on) limit 0.01 1s forward bias safe operating area 100 us 1m s 10 m s dc v ds - drain to source voltage - v i d - drain current - a 100ms pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse 1
STF2455 ver 1.0 www.samhop.com.tw nov,09,2012 4 0 0 10 30 20 1 0.8 0.6 0.4 0.2 v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage v gs = 4.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 0.9 0.8 0.7 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 1.0 t a = -25 c 25 c 75 c 125 c 0 2 8 6 4 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 10 40 30 20 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = 6.5 a 12 10 3.7 v 10 60 40 50 4.0 v 3.1 v 3.7 v 2.5 v 0.6 0.5
STF2455 ver 1.0 www.samhop.com.tw nov,09,2012 5 q g - gate charge -nc v gs - gate to drain voltage - v dynamic input characteristics 0.01 0.1 100 10 1 0.9 0.6 0.3 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 0 -50 3 12 9 6 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature i d = 6.5 a 15 v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 4 3 2 24 18 12 6 1 1.8 1.5 1.2 v gs = 0 v 3.7 v v dd = 5 v 12 v 20 v i d = 13 a 10 0.1 100 1000 100 10 1 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf capacitance vs. drain to source voltage 1 0.1 10 100 10 1 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics t d(on) t d(off) t r t f v dd = 20.0 v v gs = 4.5 v r g = 6 c oss c rss c iss
STF2455 ver 1.0 www.samhop.com.tw nov,09,2012 6 package outline dimensions d pin #1 dot by marking top view e tdfn pin #1 id chamfer 0.300mm bottom view a a1 b side view symbols millimeters inches a a1 d e h j k l f min. nom. max. 0.700 0.750 0.000 2.950 3.000 1.950 2.000 1.975 2.025 0.200 0.250 0.350 0.400 0.800 0.028 0.050 0.000 3.050 0.116 2.050 0.077 2.075 0.078 0.300 0.008 0.014 0.450 tdfn ( 2 x 3 ) - 6l 6 1 f g h j k l min. nom. max. 1.450 1.500 1.550 g 0.250 bsc 0.500 bsc 0.057 0.010 bsc 0.020 bsc 0.030 0.118 0.079 0.080 0.010 0.016 0.059 0.031 0.120 0.080 0.082 0.012 0.018 0.061 0.002
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